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| 3SK317 Silicon N-Channel Dual Gate MOS FET UHF / VHF RF Amplifier ADE-208-778 (Z) 1st. Edition Mar. 1999 Features * Low noise characteristics; (NF = 1.0 dB typ. at f = 200 MHz) * High power gain characteristics ; (PG = 27.6 dB typ. at f = 200 MHz) Outline CMPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain Note: Marking is "ZR-". 3SK317 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate1 to source voltage Gate2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 14 8 8 25 100 150 -55 to +150 Unit V V V mA mW C C Electrical Characteristics (Ta = 25C) Item Symbol Min 14 8 8 -- -- 0 0 4 20 2.4 0.8 -- 24 -- 12 -- -- Typ -- -- -- -- -- 0.2 0.3 8 25 3.1 1.1 0.021 27.6 1.0 15.6 3 2.7 Max -- -- -- 100 100 1 1 14 -- 3.5 1.4 0.04 -- 1.5 -- 4 3.5 Unit V V V nA nA V V mA mS pF pF pF dB dB dB dB dB VDS = 6 V, VG2S = 3 V I D = 10 mA , f = 200 MHz VDS = 6 V, VG2S = 3 V I D = 10 mA , f = 900 MHz VDS = 6 V, VG2S = 3 V I D = 10 mA , f = 60 MHz Test Conditions I D = 200 A VG1S = VG2S = -3 V I G1 = 10 A VG2S = VDS = 0 I G2 = 10 A VG1S = VDS = 0 VG1S = 6 V VG2S = VDS = 0 VG2S = 6 V VG1S = VDS = 0 VDS = 10 V, VG2S = 3 V I D = 100 A VDS = 10 V, VG1S = 3 V I D = 100 A VDS = 6 V, VG1S = 0.75 V VG2S = 3 V VDS = 6 V, VG2S = 3 V I D = 10 mA , f = 1 kHz VDS = 6 V, VG2S = 3 V I D = 10 mA , f = 1 MHz Drain to source breakdown voltage V(BR)DSS Gate1 to source breakdown voltage Gate2 to source breakdown voltage Gate1 to source cutoff current Gate2 to source cutoff current Gate1 to source cutoff voltage Gate2 to source cutoff voltage Drain current Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Power gain Noise figure Power gain Noise figure Noise figure V(BR)G1SS V(BR)G2SS I G1SS I G2SS VG1S(off) VG2S(off) I DS(op) |yfs| Ciss Coss Crss PG NF PG NF NF 2 3SK317 Maximum Channel Power Dissipation Curve Channel power dissipation Pch (mW) 200 I D (mA) 20 Typical Output Characteristics 1.2 V VG2S= 3 V Pulse test 1.0 V 16 150 12 100 Drain current 0.8 V 8 0.6 V V G1S = 0.4 V 0 50 100 150 (C) 200 0 2 10 4 6 8 Drain to source voltage V DS (V) 50 4 Ambient Temperature Ta I D (mA) Drain Current vs. Gate1 to Source Voltage 20 3.0 V VDS = 6 V 2.5 V Pulse test 2.0 V 16 1.5 V 12 1.0 V (mA) Drain Current vs. Gate2 to Source Voltage 20 3.0 V 2.0 V V DS = 6 V Pulse test 2.5 V 16 1.5 V 12 1.0 V Drain current 8 Drain current ID 8 4 VG2S = 0.5 V 0 1 2 3 Gate1 to source voltage 4 5 VG1S (V) 4 VG1S = 0.5 V 0 1 2 3 Gate2 to source voltage 4 5 VG2S (V) 3 3SK317 Forward Transfer Admittance vs. Gate1 to Source Voltage 30 VDS= 6 V f = 1kHz 24 2.5 V 2V 12 1.5 V 1V VG2S = 0.5 V 0 0.4 0.8 1.2 1.6 2 Gate1 to source voltage VG1S (V) 0 4 8 12 16 Drain current I D (mA) 20 3V Power gain PG (dB) 50 40 Forward transfer admittance |yfs| (mS) Power Gain vs. Drain Current VDS= 6 V VG2S = 3V f = 200MHz 18 30 20 6 10 Noise Figure vs. Drain Current 5 VDS= 6 V VG2S = 3V f = 200MHz 50 Power Gain vs. Drain to Source Voltage VG2S= 3V I D = 10mA f = 200MHz NF (dB) Power gain PG (dB) 20 4 40 3 30 20 Noise figure 2 1 10 0 4 8 12 16 Drain current I D (mA) 0 2 4 6 8 10 Drain to source voltage VDS (V) 4 3SK317 Noise Figure vs. Drain to Source Voltage 20 VG2S = 3V I D = 10mA f = 200MHz Power Gain vs. Drain Current 5 4 Noise figure NF (dB) 3 Power gain PG (dB) 16 12 2 8 VDS = 6V VG2S = 3V f = 900MHz 1 4 0 2 4 6 8 (V) 10 0 4 8 12 16 20 Drain to source voltage VDS Drain current I D (mA) 5 Noise Figure vs. Drain Current 20 Power Gain vs. Drain to Source Voltage NF (dB) 4 Power gain PG (dB) 16 3 12 Noise figure 2 VDS = 6V VG2S = 3V f = 900MHz 4 8 12 16 Drain current I D (mA) 20 8 VG2S = 3V I D = 10mA f = 900MHz 2 4 6 8 VDS (V) 10 1 4 0 0 Drain to source voltage 5 3SK317 Noise Figure vs. Drain to Source Voltage 5 NF (dB) VG2S = 3V I D = 10mA f = 900MHz VDS = 6V VG2S = 3V f = 60MHz Noise Figure vs. Drain Current 10 NF (dB) 8 4 6 3 Noise figure 4 Noise figure 2 2 1 0 2 4 6 8 (V) 10 0 4 8 12 16 20 Drain to source voltage VDS Drain current I D (mA) 5 Noise Figure vs. Drain to Source Voltage VG2S = 3V I D = 10mA f = 60MHz NF (dB) Noise figure 4 3 2 1 0 2 4 6 Drain to source voltage 8 VDS 10 (V) 6 3SK317 Package Dimensions Unit: mm 2.0 0.2 1.3 0.65 0.65 0.3 - 0.05 + 0.1 0.425 0.3 - 0.05 + 0.1 0.16 - 0.06 + 0.1 3 2 2.1 0.3 1.25 0 ~ 0.1 4 0.3 - 0.05 0.65 + 0.1 1 0.6 0.425 0.9 0.1 0.4 - 0.05 + 0.1 1.25 0.2 Hitahi Code EIAJ JEDEC CMPAK-4 SC-82AB -- 7 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan. |
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